Latest News Power

Oct31

Versatile SiC JFETs Benefit Power Switching And Circuit Protection Applications

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Article published by How 2 Power Today.

Jul04

1.8mW - 1200V SiC Cascode

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UF3SC120002SNS by USCi.

Jun25

Active-Semi join the Qorvo family

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Active-Semi will become part of Qorvo’s Infrastructure and Defense Products (IDP) group.

Apr04

Power Components Australia Pty Ltd – Business Unit Structure

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Power Components Australia PTY LTD trading as Power Components.

Apr04

M3660REM

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Regen Energy Monitor by Bonitron.

Mar19

The New LSUC 3.0V 3600F Cell

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New range by LS Mtron.

Jan30

Vincotech's SiC module Portfolio

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Vincotech boosts efficiency and performance for standard and custom power modules with its SiC-driven power portfolio.

Jan30

Cooling Wide-Bandgap Materials in Power Electronics

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Engineers are always looking for an edge in their designs to extract as much power and performance as possible from a system, while attempting to meet industry trends in miniaturization.

Jul04

Silicon Carbide Optimized Footprint: XM3 Module

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Achieving Maximum SiC Performance

Jun25

New Family of 650 V GaN E-HEMTs from GaN Systems

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The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances.

Jun25

Wolfspeed's New System Reference Designs

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Wolfspeed has introduced three new reference designs that can be used for simulations or as drop-in design solutions.

Apr04

Article: Reduce Size and Increase Efficiency with GaN-based LLC Solution

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GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to Silicon MOSFETS.

Apr04

GaN Systems is a Power Conversion Game Changer

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Gallium nitride (GaN) semiconductors can no longer be considered a niche product, but rather an emerging market standard of power conversion.

Mar19

Wolfspeed 1700V C5D SiC Diodes

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Optimized for high-voltage, high-power environments.

Jan30

DC Bus Switching Performance as Determined by Commutation Loop Parasitics and Switching Dynamics

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In this article a 250 kW all-SiC inverter evaluation kit designed around low-inductance, high-speed power modules is used to demonstrate the DC bus switching performance resulting from the interaction among commutation loop parasitics and the switching dynamics.

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