wireless power components
Mar22

Product highlight - New X-series

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StarPower’s new X-Series 1700V Insulated Gate Bipolar Transistor modules

Richardson Electronics now supply the X-Series 1700V IGBT Modules from Starpower

 xseries

 

The new X-Series features ultra-low conduction losses as well as short circuit ruggedness, strengthening StarPower’s offerings as a leading and independent manufacturer of power modules.

1700V IGBT Modules

 This new range of 1700V IGBTs are offered in 50 – 600 amps and are available over several standard packages and topologies in the medium and high-power segment for design in applications such as industrial motor drives, renewable energy, induction heating and welding in the power range of 10kW up to 1MW, and more. StarPower designs and manufactures IGBT, SiC MOSFET, and customized modules.

The following standard versions are available:

C1.0.Half Bridge 1700V

C10Half Bridge Resized
  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Modules:

1700V/50A 2 in one-package (GD50HFX170C1S)

1700V/75A 2 in one-package (GD75HFX170C1S)

1700V/100A 2 in one-package (GD100HFX170C1S)

C2.0.Half Bridge 1700V

C20Half Bridge Resized
  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Modules:

1700V/100A 2 in one-package (GD100HFX170C2S)

1700V/150A 2 in one-package (GD150HFX170C2S)

1700V/200A 2 in one-package (GD200HFX170C2S)

1700V/300A 2 in one-package (GD300HFX170C2S)

C2.1.Single Switch

C21Single Switch Resized
  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Modules:

1700V/400A 1 in one-package (GD400SGX170C2S)

1700V/600A 1 in one-package
(GD600SGX170C2S
)

C6.1.Half Bridge

C61Half Bridge Resized          

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Modules:

1700V/225A 2 in one-package (GD225HFX170C6S)

1700V/300A 2 in one-package (GD300HFX170C6S)

1700V/450A 2 in one-package (GD450HFX170C6S)

1700V/600A 2 in one-package (GD600HFX170C6S)

C6.2.3 Phase Bridge

C623 Phase Bridge Resized
  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Modules:

1700V/75A 6 in one-package (GD75FFX170C6S)

C6.0.PIM

C623 Phase Bridge Resized
  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Modules:

1700V/50A PIM in one-package (GD50PIX170C6S)

P1.0.Half Bridge

P10Half Bridge Resized
  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Modules:

1700V/650A 2 in one-package (GD650HFX170P1S)

P2.0.Half Bridge

P20Half Bridge Resized
  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Enlarged Diode for regenerative operation
  • Isolated copper baseplate using DBC technology
  • High power and thermal cycling capability

Modules:

1700V/1000A 2 in one-package (GD1000HFX170P2S)

1700V/1400A 2 in one-package (GD1400HFX170P2S)


Contact Power Components for more information